Abstract
Practical results of photomask defect repair using focused ion beam (FIB) technology are presented. From Auger electron analysis, the deposited carbon film for clear defect repair contains 22% gallium, which is an element of the ion beam. Substrate damage produced by ion beam irradiation can be removed incorporating CHF3+O2 reactive ion etching. Printing results using a 5:1 stepper show that the FIB technology can be applied to photomask production.
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