Abstract

Details on a broadband MMIC frequency doubler targeting the MVDS market are presented. The design evolution from an individual pHEMT device to the complete practical doubler realisation is discussed. The doubler MMIC, which has been fabricated using the GMMT H40 GaAs process, has been evaluated in a customised package. An output power of +10 dBm at 40 GHz has been achieved with an associated conversion gain of 1.5 dB. The measured and predicted performance responses are compared. This chip is ideally suited to use in a number of emerging mm-wave applications.

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