Practical guide for validated memristance measurements

Abstract

Chua [IEEE Trans. Circuit Theory 18, 507-519 (1971)] predicted rather simple charge-flux curves for active and passive memristors (short for memory resistors) and presented active memristor circuit realizations already in the 1970 s. The first passive memristor has been presented in 2008 [D. B. Strukov, G. S. Snider, and D. R. Williams, Nature (London) 453, 80-83 (2008)]. Typically, memristors are traced in complicated hysteretic current-voltage curves. Therefore, the true essence of many new memristive devices has not been discovered so far. Here, we give a practical guide on how to use normalized charge-flux curves for the prediction of hysteretic current-voltage characteristics of memristors. In the case of memristive BiFeO3 thin film capacitor structures, the normalized charge-flux curves superimpose for different numbers of measurement points Ns and a different measurement time per measurement point Ts. Such normalized charge-flux curves can be used for the prediction of current-voltage characteristics for input signals with arbitrarily chosen Ns and Ts.