Abstract
A practical approach to the problem of ion track radial energy distribution has been developed in a computer calculation. This approach uses an existing theory that analytically describes the spatial energy deposition by delta rays. The results agree favorably with a Monte Carlo calculation that is more realistic but much less practical. Several cases of incident ions in silicon have been calculated and results presented. The information is useful as input to problems requiring initial track structure for charge transport in semiconductor applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
