Pr and Gd co-doped bismuth ferrite thin films with enhanced multiferroic properties

Abstract

Pr and Gd co-modified Bi 0⋅95−xPr x Gd 0⋅05FeO 3 (x = 0⋅00, 0⋅05, 0 ⋅10) (BPGFO) thin films on Pt(111) / Ti /SiO 2 /Si(100) substrates were prepared by a sol-gel together with spin coating technique. A detailed study of electrical and magnetic properties of these thin films is reported. X-ray diffraction analysis shows that, with an increase in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. Polarization-electric field hysteresis loops of these thin films demonstrate that the incorporation of Pr and Gd into the Bi site of BiFeO 3 thin film could enhance the ferroelectric performance. Compared to other thin films, the optimal ferroelectric behaviours in Bi 0⋅85Pr 0⋅1Gd 0⋅05FeO 3 thin film are ascribed to its large dielectric constant, low dissipation factor and low leakage current density. Room temperature magnetization-magnetic field curves of these thin films indicate that all the samples are of paramagnetic behaviours and the enhanced saturation magnetic properties can be found.