Abstract
A previous tight-binding model of power dissipation in ananoscale conductor under an applied bias is extended to takeaccount of the local atomic topology and the local electronicstructure. The method is used to calculate the power dissipatedat every atom in model nanoconductor geometries: a nanoscaleconstriction, a one-dimensional atomic chain between twoelectrodes with a resonant double barrier, and an irregularnanowire with sharp corners. The local power is compared with the local current density and the local density of states. Asimple relation is found between the local power and the currentdensity in quasiballistic geometries. A large enhancement in thepower at special atoms is found in cases of resonant andanti-resonant transmission. Such systems may be expected to beparticularly unstable against current-induced modifications.
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