Power trench gate MOSFET with an integrated 6-pack configuration for a 3-phase inverter

Abstract

In this paper, we present a new 6-pack power module for a 3-phase inverter that is integrated with the six trench gate double diffused metal-oxide semiconductor field-effect transistor (TDMOS) on a single chip. An integration of each power device is performed through a trench isolation technique using deep reactive-ion etching trench technologies. Through this new technology, the integrated power metal-oxide semiconductor field-effect transistor (MOSFET) produces a high current of above 30 A at a gate bias of 10 V. In addition, each trench power MOSFET (1-pack) has a minimum specific on-resistance of 21 mohm.cm2 and a typical breakdown voltage of 95 V. The trench isolation provides good isolation up to 120 V. The measurement results show that this 6-pack structure can successfully be integrated with other analog/driver integrated circuit on a single chip. Furthermore, to monitor the operating current of the MOSFET under an inverter-operating condition, sensing FET is integrated a FET into the main MOSFET source region without compromising either the area or the operation of the MOSFET.