Abstract
We report efficient continuous wave laser operation of a laser diode both-side pumped Pr:YAlO3 crystal at room temperature in a microchip geometry arrangement. The microchip was formed by a 5 mm long 0.6 at.% doped Pr:YAlO3 crystal having dielectric mirrors directly deposited on its facets. As pump sources, two InGaN laser diodes with maximum output power of 1 W each were used. 490 mW of output power at 747 nm with an oscillation threshold of about 300 mW has been demonstrated. The corresponding slope efficiency related to the absorbed pump power was 45%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
