Abstract
The effects of increasing excitation on the performance of quantum-well semiconductor laser amplifiers were investigated. Amplified spontaneous emission (ASE) and gain roll over at high injected carrier densities are two limitations to the power scaling of these devices. A Rigrod analysis was used to study the effects of these limitations on the gain, ratio of signal to ASE power, and efficiency for different values of injection current, facet reflectivity, and input laser intensity. Comparisons are made with an equivalent amplifier operating with a bulk semiconductor gain medium. This analysis suggests that quantum-well semiconductor amplifier performance improves with a double-pass configuration. >
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