Abstract

Device guidelines for reducing power with punch-through current annealing in gate-all-around (GAA) FETs were investigated based on three-dimensional (3D) simulations. We studied and compared how different geometric dimensions and materials of GAA FETs impact heat management when down-scaling. In order to maximize power efficiency during electro-thermal annealing (ETA), applying gate module engineering was more suitable than engineering the isolation or source drain modules.

Highlights

  • MOSFETs have been aggressively scaled down to improve packing density and chip performance [1]

  • short-channel effects (SCEs) have been effectively suppressed by improving gate controllability with three-dimensional (3D) device structures such as FinFETs and gate-all-around (GAA) FETs, and high-k gate dielectric and metal gate (HKMG)

  • Degradation in the transconductance subthreshold swing (SS) and V T were observed at 227 mV/dec and 0.65 V, respectively

Read more

Summary

Introduction

MOSFETs have been aggressively scaled down to improve packing density and chip performance [1]. As semiconductor devices shrunk, several issues have arisen, such as short-channel effects (SCEs). SCEs give rise to an increase in the off-state current (IOFF ) and subthreshold swing (SS) and result in an increase in static power consumption (POFF = V DD × IOFF ) in the OFF-state. SCEs have been effectively suppressed by improving gate controllability with three-dimensional (3D) device structures such as FinFETs and gate-all-around (GAA) FETs, and high-k gate dielectric and metal gate (HKMG). Gate dielectric damage from hotcarrier injection (HCI), which is associated with the lateral drain electric field, has resurfaced as a matter of concern in semiconductor devices [2,3]. HCI increases both the threshold voltage (V T ) and SS, and results in unwanted V T mismatching while increasing IOFF in circuitries. The HCI decreases both the ON-state current (ION )

Methods
Results
Conclusion
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call