Abstract
Opening switches (OS) with inductive storage system are very promising in pulsed power applications. The density of energy stored in an inductor is higher than in a capacitor. The pulsed voltage generated during a short time at the load may be many times (dozens) higher than the voltage at which the energy has been stored. In the early 1980s a new effect of super fast voltage restoration in high voltage silicon p-n junctions, when the junction current is switched from forward to reverse direction, was discovered. This discovery gave rise to a new generation of solid state plasma opening switches, called drift step recovery diodes (DSRD). Being semiconductor devices, DSRD have unlimited life time, low jitter. A maximum repetition rate is limited mainly by heat and may be as high as megahertz. In this work the performance of DSRD and their limits are considered.
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