Abstract
The relation between the total radio frequency (rf) generator output power and the power that is actually dissipated in the plasma in rf dry etching systems was investigated. Power loss processes are described, their relation with the construction of the etch system is demonstrated, and their influence on the discharge is discussed. A method to estimate the power losses occurring in the etch system is described. For three different dry etching systems it is demonstrated that the stray capacitance of the system plays an important role in the power loss processes. In asymmetrical systems the dc self-bias voltage is shown to be a reliable parameter in determining the actual power dissipated in the plasma.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
