Abstract
A newly developed electrothermal calculation method is implemented to estimate the power loss and working temperature of insulated gate bipolar transistor (IGBT) devices. Based on the measurement of the IGBT's characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then, the thermal network is used to calculate the working temperature. The comparison between experimental and calculation results shows that this method is effective as a designing step with only the time-domain voltage and current data obtained from simulation results.
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