Abstract
In this paper, transparent conducting indium-zinc oxide (IZO) films have been grown on a hard polycarbonate (HPC) substrate without postdeposition annealing treatment. The electrical, optical, and structural properties of these prepared films are investigated by different dc sputtering powers, such as 50, 80, and 100 W/cm2, with/without the ion-assisted deposition (IAD) technique. An optimal IZO deposition condition is developed for flexible organic light-emitting device (OLED) applications. The IZO films grown at low temperature (∼50°C) with dc magnetron sputtering (100 W power) and the IAD technique were used to study the electroluminescence (EL) performance of the OLEDs. The EL results are better than those that are measured with commercial indium-tin oxide anodes and well above the electro-optical application standard. © 2004 The Electrochemical Society. All rights reserved.
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