Abstract
In this paper, we performed a power cycling test (PCT) under harsh operating conditions, such as an average junction temperature (TSUBjm/SUB) of 120°C and a junction temperature gradient (ΔTSUBj/SUB) of 110°C to analyze the degradation characteristics of commercial 4H-SiC MOSFETs. For accurate analysis, various electrical characteristics such as output curve, transfer curve, gate leakage current curve, and voltage-capacitance curve were measured before and after PCT and were compared. In addition, transmission electron microscopy (TEM) and simulation were utilized. Both voltage-capacitance curves and TEM images after PCT show degradation of the SiO₂/SiC interface.
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