Abstract
This work describes a novel analysis method for the power cycling test, developed for high-voltage and temperature silicon carbide diodes. The silicon carbide devices working at temperatures beyond 170°C, the maximum temperature rating for silicon devices, need specific reliability tests adapted to high temperature operation of this new generation of power devices. The specificity of the further presented method consist in the use of 10ms sinusoidal power current pulses that are able to evidence the temperature developed inside the diode during the power pulse, the temperature characteristic delay versus the applied current and the temperature calibration method. Moreover, this overall method is able to evidence the transformations occurred in the bonding contact and the dye attach.
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