Abstract
The power characteristics of lasers with a quantum-well (QW) waveguide are calculated based on a complex model taking into account the diffusion and drift of charge carriers, capture of electrons and holes at the QW levels, spatial distribution of radiation in the cavity, intraband absorption, and heating of the active region. Structures with doped blocking barrier layers are proposed, which allow one to decrease leakage currents to a few percent. The calculated average output power of a laser based on the GaInAs/GaAs QW heterostructure (aperture 100 μm) with a QW waveguide and a GaAsP doped blocking layer in a pulsed regime was 29 W at 80-A current pulses with a duration of 5 μs.
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