Power characteristics of AlN/GaN MISFETs on sapphire substrate

Abstract

AlN/GaN metal insulator semiconductor field effect transistors (MISFETs) on a sapphire substrate with 5 nm AlN barrier layer were fabricated using a simple wet-etching technique. Fabricated AlN/GaN MISFETs with 1 µm gate length and 200 µm gate width showed a maximum drain current density of 380 mA/mm and a peak extrinsic transconductance of 85 mS/mm. Power characteristics were measured at 2 GHz and showed an output power density of 850 mW/mm with 23.8% PAE and 13.1 dB linear gain at a drain bias of 15 V.