Power Characteristics for the Dual Channel 4H-SiC Metal Semiconductor Field Effect Transistor

Abstract

The current and breakdown characteristics of a dual channel 4H-SiC metal semiconductor field effect transistor (4H-SiC MESFET) are studied by using simulation tool ISE-TCAD. The simulated results show that current density of the dual channel structure is much higher than that of the conventional structure at the same gate bias. The breakdown happened in the gate terminal close to the drain and the breakdown voltage of the dual channel 4H-SiC MESFET is 120V, 50% higher than that of the conventional 4H-SiC MESFET because there is a more dispersive electric field distribution. So, the dual channel 4H-SiC MESFET has better power performance, when compared with the conventional structure.