Potential profile evaluation of a diamond lateral p–n junction diode using Kelvin probe force microscopy

Abstract

We report Kelvin probe force microscopy (KPFM) analysis results for a diamond lateral p–n junction diode, which consists of a junction between band conduction and hopping conduction layers, and discuss the potential spatial distribution in the device. KPFM analysis was performed in order to clarify the real device operation mechanism because it can be used to determine surface potential profiles. The lateral p–n junction diode was fabricated using a selective growth technique for heavy phosphorus doping, resulting in hopping conduction layers. In the static state, the KPFM analysis results for the depletion layer width and built‐in potential were thought to be reasonable for a diamond p–n junction diode. In addition, the potential profile was obtained, even during the application of different bias voltages. These results indicate that KPFM analysis is appropriate for diamond devices.