Abstract
Herein, we find that TiN sputter-deposited on GaN displayed the desired optical properties for plasmonic applications. While this is a positive result indicating the possible use of p- or n-type GaN as a collector of plasmonically generated hot carriers, the interfacial properties differed considerably depending on doping conditions. On p-type GaN, a distinct Schottky barrier was formed with a barrier height of ~0.56 eV, which will enable effective separation of photogenerated electrons and holes, a typical approach used to extend their lifetimes. On the other hand, no transport barrier was found for TiN on n-type GaN. While the lack of spontaneous carrier separation in this system will likely reduce unprompted hot carrier collection efficiencies, it enables a bias-dependent response whereby charges of the desired type (e.g., electrons) could be directed into the semiconductor or sequestered in the plasmonic material. The specific application of interest would determine which of these conditions is most desirable.
Highlights
Carrier Generation and Collection.Refractory metals are typified by high-temperature stability, chemical inertness, and mechanical hardness
Refractory nitrides, which combine a refractory metal with nitrogen, retain the desirable properties of temperature and structural robustness, they can be susceptible to oxidation
Titanium nitride (TiN), in particular, has attracted attention owing to optical properties that can closely mimic those of elemental gold and a composition that makes it compatible for electronic contacts to semiconducting nitrides
Summary
Nanomaterials 2022, 12, 837 that of gold’s [18], one can implement a variety of TiN plasmonic structures (cubes [19], disks [20], ridges [21], planar films [22]) that exhibit resonant plasmonic response comparable to that of gold, while at the same time, offering the temperature and physical robustness of a refractory material, and a well-controlled interfacial electronic structure with a nitride semiconductor This combination of traits has made TiN an appealing candidate for photothermal applications or technologies that require large amounts of inexpensive plasmonic material. Identifying semiconductors that form a Schottky barrier with TiN nanoparticles can extend their application to photochemical reactions that are not compatible with applied biases, such as an open architecture interfaced with air It is with these qualities, challenges, and potential applications in mind that we examine the (1) structural characteristics, (2) optical response applicable to preparing resonant plasmonic structures, and (3) interfacial electronic structure of the TiN/GaN interface for both p- and n-doped GaN without any post-deposition annealing. All of these characteristics play important roles in plasmonically-enhanced photocarrier generation and collection
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