Abstract

This paper focuses on the potential of epoxy resin/aluminum nitride (EP/AIN) nanocomposites through experiments and simulation for the packaging material of a 15 kV SiC-IGBT module. For this purpose, space charge, AC breakdown, thermal conductivity and glass transition temperature <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(T_{\mathrm{g}})$</tex> are measured. The electric stress reduction effect in EP/AIN nanocomposites is compared to the traditional packaging material at high-frequency AC and square voltages at 150 °C using the electric field simulation. The experimental results show that the 2 wt% EP/AIN nanocomposite exhibits the least space charge accumulation, highest AC breakdown strength and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$T_{\mathrm{g}}$</tex> amongst the tested nanocomposites. The offset of metallization layers plays a crucial role in the impact of the electrical properties of packaging materials on the electric field of the packaging structure. When the offset of metallization layers is zero, the maximum electric stress in the EP/AIN nanocomposites is lower than the traditional packaging material, both under the AC and square voltages. In the EP/AIN nanocomposites, as the frequency or the nano-AIN content increases, the maximum electric stress decreases under the AC voltages. Traditional packaging materials have a steeper transient electric field variation than EP/AIN nanocomposites, although the transient process is smoother at higher frequencies under square voltages for all the considered materials. A simplified physical model is proposed to explain the electric field distribution variation in the packaging structure under the AC voltages.

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