Abstract
AbstractWhile the vast majority of GaN X-band PAs is realized as microstrip circuits, this paper reports design, fabrication and measurement of a coplanar version. The amplifier is processed using the FBH 4-inch GaN-on-SiC technology with 0.25 µm-gate GaN HEMTs. The two-stage power amplifier circuit delivers more than 12 W cw output power at 10 GHz, with a large-signal gain of 20 dB and a final stage drain efficiency of 45%. Benchmarking shows that these are best-in-class values for a coplanar X-band MMIC, which come very close to the state-of-the-art microstrip counterparts.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.