Potential fluctuations due to P b centres at the [formula omitted] interface

Abstract

We show that the potential fluctuation model of Brews applies very accurately to P b centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly ‘pure’ interface largely dominated by the P b-like defects. For the (100) interface, P b0 and P b1 defects appear to have the same capture cross-section.