Abstract
We report on a photoluminescence (PL) study of highly compensated Si-doped GaAs. Si-doped GaAs layers were grown p-type at 700°C by liquid phase epitaxy and subsequently converted to n-type by thermal annealing at temperatures above a transition temperature of about 840°C. Annealing at temperatures close to the transition temperature resulted in a very high degree of compensation. This is verified by a large shift of photoluminescence bands with excitation intensity, up to 24 meV per decade of increase in the excitation power density. We attribute the shift to the presence of potential fluctuations which we correlate with a possible site-switching of Si from Ga sites to As sites. Our results strongly suggest that the type conversion from p- to n-type is in fact caused by site-switching of the Si impurity.
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