Potential energy of photon passes through cold mirror on photovoltaic-thermoelectric generator with artificial lights radiation

Abstract

The amount of photon energy becomes a key parameter that determines the release of electron bonds which is often called a band-gap in photovoltaic cells (PV) to generate electricity. This paper presents the results of measurements of photon energy from radiation sources of artificial light Halogen, Incandescent and Xenon which aims to adjust the bad gap type of solar cell material. Simulations of measuring 50 watts of bulb radiation were carried out repeatedly with the Spectrometer sensor and the application software Spectragryph 1.2.8 on each electron Volt the bulb light. The incoming radiation form the bulb is concentrated with a Polymethylmetacrylate (PMMA) Fresnel lens with an optimal light transmission capability of 92%. The results of this light transmission will be divided after illuminating at the Cold mirror (CM) spectrum splitterr, partly reflected in the PV module and partially transmitted to the thermoelectric generator (TEG) in the PV-TEG hybrid. The measurement of photons leading to PV show values of 2.2 and 2.4 eV for Halogen with Cadmium Sulfide that match the band-gap for the photon’s energy. While the Incandescent photon energy, it is more suitable with PV material in Silicon, Germanium and Indium nitride. For Xenon, it gives the effect of releasing electrons bond to Cadmium sulfide and band gap which is below 2.42 eV, such as CdSe, InN and Si. The maximum light intensity reflected by CM is emitted by a Xenon bulb, then Halogen and the lowest is Incandescent (50> 40> 36) a.u., respectively. Meanwhile, the energy of the photons transmitted to the TEG module illustrates a different trend, where the best Halogen is followed by the lowest then Xenon incandescent.