Abstract
Results of the investigation on the formation of double layers in double plasma device are presented. By appropriate modifications in the biasing conditions, we have been able to obtain both weak (eΔφ 10kTe) in the device. Unlike previous experiments, we have not been limited to potential jumps equal to ionisation potential of the neutral gas. A detailed investigation has been carried out to find out why earlier experiments in similar devices were limited to only weak double layers.
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