Abstract
An Au/SiO2/Si MOS structure was fabricated by the thermal oxidation of H-terminated Si(100) surface and the electrode formation, and hard X-ray photo-emission spectroscopy (HAXPES) measurements of MOS structure under the different applied bias conditions were performed systematically to investigate the potential distribution such as the band bending in the MOS structure and the chemical bonding features in the region near the Au/SiO2 interface. And, the measured energy position of HAXPES signals originating from the Au electrode, SiO2, and Si substrate were compared with the calculation results of potential change for ideal MOS structure in consideration of SiO2 thickness and impurity concentration of Si substrate.
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