Potential application of novel graphene/diamane interface in silicon-based heterojunction with intrinsic thin layer solar cell

Abstract

In this article, the patentability of novel graphene/diamane interface in HIT solar cell has been explored by simulated a structure modelled as: graphene (TCO) / n-diamane / a-Si: H (i) / p-cSi / Ag (back contact) with the help of software AFORS-HET version 2.5. Here, n-type diamane is used as an emitter layer and graphene as TCO. An efficiency of 31.2 % is achieved with this structure by varying various parameters of n-type diamane, p-crystalline silicon and hydrogenated intrinsic amorphous silicon layer which is pressed in between the two oppositely doped wafer (diamane and c-Si). Furthermore, when ITO is used as TCO then a comparatively low efficiency 27.15 % is achieved and when the commercially available values of silicon’s parameters is used for the validation of results then an efficiency of 24.15 % is obtained. Some parameters of a-Si: H (i) has been further optimized and the optimum efficiency 31.2 % has been found at minimum thickness of 3 nm at bandgap 1.6 eV. Finally, we have demonstrated that only carbon material has an ability that its two-dimensional allotropes can be used as an emitter layer as well as efficient transparent conducting electrode.