Abstract
In this paper, we have simulated the structure of n-type MoS2/silicon heterojunction solar cell and studied its function under different conditions. The optimization of parameters of the cell's layer has been carried out by using AFORS-HET software. In the present study, MoS2 has been considered as 3-D in nature instead of the reported 2-D nature. In order to ensure the formation of Schottky junction, electric contact has been made along the c-axis to collect the minority charge carriers. After optimizing the various parameters of n-type single layer MoS2, power efficiency of 12.44% has been achieved at the room temperature, which has further decreased to 9.042% as the layer number has increased up to 40. Furthermore, after optimizing the parameters of silicon wafer maximum efficiency of 16.4% has been achieved. Temperature dependence of the cell performance has also been studied and the maximum efficiency has been achieved at 300 K. In the present study, we have demonstrated that n-type ultrathin layer of MoS2 can be used as an excellent transparent conducting electrode.
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