Abstract
Due to its high mobility, high saturation velocity, high breakdown field and relatively good t hermal conductivity, AlGaN/GaN hetero-structure attracted much attention as a promising material system for high power and high frequency transistors. Remarkable progress in high power and high frequency operation has been made in the last 10 years. 416 W output power L-band amplifier (1) and 208 W output power C-band amplifier (2) have been re ported, whereas at K a-band, 20.7 W output power from 0.2-μm long HFET has been re ported. (3) These power performances at high frequency confirmed the high potential of AlGaN/GaN het ero-structure material system and production of t hese de vices for high frequency power amplifier has been started.
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