Abstract
A low-energy electron-diffraction (LEED) I-V study of the K/GaAs(110) interface has been performed to explore structural changes during the initial stages of metal-semiconductor interface development. Analysis of LEED background intensities as a function of coverage indicates that there is no long-range ordering of the K overlayer at any coverage up to a saturated monolayer. Preferential attenuation of multiple-scattering peaks at partial K coverages permitted a kinematic LEED intensity analysis of the scattered intensities from the underlying GaAs substrate. This analysis suggests that the relaxed GaAs surface undergoes a K-induced bond rotation towards the unrelaxed position at \ensuremath{\sim}1/2 saturation K coverage.
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