Abstract
This article introduces a postmetallization “passivated edge technology” (PET) treatment for separated silicon solar cells consisting of aluminum oxide deposition with subsequent annealing. We present our work on bifacial shingle solar cells that are based on the passivated emitter and rear cell concept. To separate the shingle devices after metallization and firing, we use either a conventional laser scribing mechanical cleaving (LSMC) process or a thermal laser separation (TLS) process. Both separation processes show similar pseudo fill factor (pFF) drops of − 1.2%abs from the host wafer to the separated state. The pFF of the TLS-separated cells increases by up to +0.7%abs from the as-separated state after PET treatment due to edge passivation, while the pFF of LSMC-separated cells increases by up to +0.3%abs. On cell level, the combination of TLS and PET allows for a designated area output power density of p out = 23.5 mW/cm², taking into account an additional 10% rear side irradiance.
Highlights
T HE REVIVAL of the shingling interconnection approach of solar cells [1] is an option to obtain higher photovoltaic module output power densities pout
OPTOS simulations done on module level confirm that such thin aluminum oxide (AlOX) layers deposited on the front and rear surfaces of the cells do not induce optical losses; (iv) the passivation effect of thermal atomic layer deposition (ALD)-deposited AlOX is known to be activated at low annealing temperatures Tann < 225 °C [31], [32]
Industrial 6-inch gallium-doped Czochralski-grown silicon (Cz-Si:Ga) passivated emitter and rear cell (PERC) precursors are used for the fabrication of the pSPEER and pSPEERPET cells investigated in this article
Summary
T HE REVIVAL of the shingling interconnection approach of solar cells [1] is an option to obtain higher photovoltaic module output power densities pout. The separation process leads to a decrease in solar cell efficiency due to edge recombination induced by the separation [15]. As review of potential methods for edge passivation, we find that some previously investigated methods to reduce edge recombination of solar cells consist of introducing an emitter window commonly created by the use of diffusion barriers [16], [17]. The PET is demonstrated on bifacial p-type silicon shingled passivated edge, emitter, and rear (pSPEER) solar cells, which have been initially reported without. BALIOZIAN et al.: POSTMETALLIZATION “PASSIVATED EDGE TECHNOLOGY” FOR SEPARATED SILICON SOLAR CELLS. The effect of the separation processes and the edge passivation are discussed together with the first solar cell results
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