Abstract
Near-infrared (NIR) laser light is used to irradiate Ge epitaxial layers on Si as a post-growth annealing process with a low thermal budget for high-performance photonic device applications. In contrast to ordinary furnace/lamp annealing, where both of Ge and Si are heated, NIR laser irradiation enables a preferential annealing of Ge layers due to the optical absorption selectively in Ge. Ge pin photodiodes on Si, fabricated applying a preferential annealing of Ge with an NIR laser (1.07 µm in wavelength), show a significant reduction of dark leakage current with keeping high photodetection efficiencies, resulting from the reduction of threading dislocation density in Ge. The results indicate that the NIR laser annealing is promising to incorporate the fabrication of Ge devices at the back end of line in the Si process.
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