Abstract
AbstractWe studied the effects of post‐growth annealing on the optical properties of GaSb quantum dots (QDs). We grew GaSb QDs in GaAs by droplet epitaxy and carried out a post‐growth annealing at the temperature Ta of 700 ∼ 900 ºC. The photoluminescence (PL) spectra from the GaSb QDs were found at about 1.1 ∼ 1.3 eV. The PL peak shifts toward a higher energy with increasing Ta. For the samples post‐annealed at low temperatures, the PL intensity significantly decreases as the measurement temperature T increases. In contrast, the intensity reduction is relatively low for the high temperature annealed samples, indicating that the annealing process improves the crystalline quality of the sample. We also compared the integrated PL intensity to a model with a loss mechanism and found that the post‐growth annealing drastically decreases non‐radiative centers in the sample. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
