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Abstract
We have carried out postgrowth annealing studies on heteroepitaxial MnAs thin films deposited on GaAs(001) and Si(001) by molecular-beam epitaxy. Before annealing, a paramagnetic behavior is exhibited for MnAs∕Si(001), whereas a ferromagnetic behavior is observed for MnAs∕GaAs(001). The paramagnetic β-MnAs phase domains of the as-grown MnAs∕GaAs(001) sample disappear completely after postgrowth annealing. Surprisingly, after postgrowth annealing, the crystal orientation of the MnAs∕Si(001) film changes, and is accompanied by a shift from paramagnetic to ferromagnetic behavior. We attribute these observations to relaxation of the biaxial strain associated with the substrates.
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