(Poster Award - 2nd Place) Layer-Number Engineered Momentum-Indirect Interlayer Excitons with Large Spectral Tunability

Abstract

The diversity of two-dimensional (2D) materials provides van der Waals heterostructures with abundant degrees of freedom and makes the family a promising candidate to realize novel optoelectronic devices and an attractive platform for exploring physical phenomena. Interlayer excitons in type-II van der Waals heterostructures are equipped with an oriented permanent dipole moment and long lifetime and thus would allow promising applications in excitonic and optoelectronic devices. However, in the widely studied van der Waals heterostructures constructed by transition metal dichalcogenides, the formation of interlayer excitons is limited by the lattice mismatch, rotational and translational alignment between the constituent layers, increasing the complexity of the device fabrication. Here, I will report on the robust momentum-indirect interlayer exciton emission with widely tunable emission energy via layer engineering in transition metal dichalcogenide/2D perovskite heterostructures. The transition metal dichalcogenides with different thicknesses and 2D perovskites with different layer numbers of the inorganic octahedral slabs are stacked to form type-II van der Waals heterostructures without considering special orientation arrangement and momentum mismatch. The presence of interlayer excitons is supported by the excitation-power- and temperature-dependent photoluminescence studies, photoluminescence excitation spectroscopy, time-resolved photoluminescence decay studies and electric field-dependent photoluminescence studies. Taking advantage of the thickness- or layer-number-dependence of the electronic band structure of the constituent materials, the emission energy of the interlayer excitons in our heterostructures can be tuned from 1.3 eV to 1.6 eV, providing strong evidence for the applications of van der Waals interface engineering to broad-spectrum optoelectronics. In addition, the diffusion coefficient of interlayer excitons in our heterostructures can be estimated to be ~10 cm2 s−1, which is at least one order of magnitude larger than that in the van der Waals heterostructures with Moiré superlattice, suggesting a non-localized nature that would be beneficial to the excitonic devices. Our study would offer new insights into the nature of interlayer excitons and provoke further research into their dynamics.