Abstract

Thin films of CN x were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the C≡N phase decreases upon annealing in a vacuum. The XPS N Is peaks indicate the component due to the C≡N bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C 3 N 4 structures in films annealed at 700°C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen.

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