Abstract
The TiO2 thin film is considered as a promising wide band gap electron-transporting material. However, due to the strong Ti-O bond, it displays an inert surface characteristic causing difficulty in the adsorption and deposition of metal chalcogenide films such as Sb2Se3. In this study, a simple CdCl2 post-treatment is conducted to functionalize the TiO2 thin film, enabling the induction of nucleation sites and growth of high-quality Sb2Se3. The interfacial treatment optimizes the conduction band offset of TiO2/Sb2Se3 and leads to an essentially improved TiO2/Sb2Se3 heterojunction. With this convenient interface functionalization, the power conversion efficiency of the Sb2Se3 solar cell is remarkably improved from 2.02 to 6.06%. This study opens up a new avenue for the application of TiO2 as a wide band gap electron-transporting material in antimony chalcogenide solar cells.
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