Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure

Abstract

In this work, we investigate the effect of post-implantation thermal annealing on the quality of thin gate oxides grown on MeV ion-implanted Si substrates for the triple-well structure. The thin gate oxide grown on the MeV ion-implanted Si substrates without post-implantation thermal annealing may contain pinholes, leading to oxide failure at a very low voltage; in addition, the gate oxide has a higher density of interface states, which may result in a low breakdown voltage. With appropriate post-implantation thermal annealing before the growth of the gate oxide, e.g., 1000°C for 30 min under the MeV implantation conditions employed in this work, the gate oxide is able to regain its integrity in terms of electrical breakdown voltage.