Abstract
Proton implantation followed by rapid thermal annealing (RTA) hasbeen employed for the post-growth tuning of the band gap of molecularbeam epitaxy grown InAs/GaAs quantum dots (QDs). To enhance QDintermixing, point defects are created by proton implantation at different doses(5 × 1010–1014 cm−2) followed by rapidthermal annealing at 675 °C for 30 s. Low-temperature photoluminescence (PL) measurements have shown that theproton-implantation-induced intermixing alters both the optical transition energies and thePL full width at half maximum (FWHM). A purely proton-implantation inducedband gap tuning limit of 131 meV has been achieved for an implantation dose of5 × 1013 cm−2, keeping both the QDs’ character and around 46% of the initial integrated PLintensity.
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