Abstract
Post-growth doping of bulk CdTe with P by heating dice in orthophosphoric acid vapour and then annealing in Cd or Te has been investigated and optimised. Annealing in Te vapour after prolonged acid treatment gives the best p-type conductivity, resistivities of 0.02-0.1 Ω m and carrier concentrations of up to 5.5x10 22 m -3 being achievable. Hall data and C-V carrier concentration depth profiles are presented and the roles of the two stages of the doping process are discussed with respect to their influence on diffusion and resistivity. Cathodoluminescence microscopy indicated that diffusion of P into CdTe is assisted by the presence of native defects.
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