Post-growth annealing effect on the performance of Cu2SnSe3 solar cells

Abstract

In this work, the effect of post-deposition annealing in selenium environment was studied on Cu2SnSe3 thin film solar cells prepared from solid solution by doctor blade method. XRD pattern confirms deposited films are of polycrystalline nature having cubic phases with (1 1 1) orientation. The crystallinity improves with the increase in annealing temperature. At high annealing temperature surface agglomeration was found which is due to the melting and re-evaporation of the components from the surface. Electrical properties like carrier mobility, conductivity also modified with the increase in annealing temperature. Maximum efficiency of 1.17% was achieved for the sample annealed at 400 °C having barrier height (ϕb), ideality factor (n) and series resistance (Rs) nearly equal to 0.71 eV, 1.5 and 69 Ω respectively.