Abstract
XPS characterization was used to determine the surface chemistry of a mid-wave infrared T2SL treated by both an HCl-based and an H3PO4-based etching solution. This analysis, performed over both the etched and unetched portions of the sample, revealed that the HCl-based etch removed Ga and Sb oxides while the H3PO4-based etch removed In and As oxides. XPS imaging was also done on 200μm×200μm areas of the sample, and showed that HCl solution (Ga, and O) produced surfaces that were less stoichiometric than the H3PO4 solution (Ga2O3, Sb2O5, Sb in GaSb). Single-pixel, p-i-n test structures were fabricated using either etching solution, and an electrical comparison revealed over an order of magnitude improvement in dark current for the sample treated with the H3PO4 solution, compared to the HCl sample.
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