Abstract
Post CMP cleaning is a very important step to remove the CMP slurry abrasive from wafer surface and get rid of the CMP particles defects. In this paper, we studied the relationship between the ceria particle surface charge and effective cleaning process of oxide wafers. We also developed an effective on-platen cleaning process to remove ceria particles from TEOS (tetraethyl orthosilicate) wafer surface when the ceria slurry had positive zeta potential. In this process, the cleaning solution was introduced on polishing platen but not into cleaner. This process offers advantage over traditional ceria cleaning process.
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