Abstract
Post cleaning experiments for front end of the line (FEOL) CMP with silica and ceria slurries are carried out on commercial polishers with 300 mm oxide, nitride, and integrated shallow trench isolation (STI) wafers. Considering the charge attraction or repulsion between particles and wafer surface, both acidic and basic clean chemicals are applied at different stages in the post CMP process sequence. Diluted hydrogen peroxide in a non-contact megasonic cleaner is used to remove ceria abrasive particles and polish residues with high efficiency. On-platen buff clean with or without pad conditioning can make an impact on the post CMP cleaning performance. Post CMP cleaning splits are executed in order to evaluate the effectiveness of each of the process steps and their roles in the overall cleaning performance.
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