Abstract
AbstractThe effect of post‐annealing treatment upon the photoluminescence (PL) spectra of phosphorus‐doped ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy using tris‐dimethylaminophosphorus (TDMAP) has been investigated. PL properties at 4 K of the layers are dramatically improved by the post‐annealing in nitrogen flow, i.e. donor–acceptor pair emission vanishes and instead free‐to‐bound transition emission (FB) and broadened acceptor‐related excitonic emission (Ia) appear. PL intensity at room temperature is enhanced remarkably by the treatment. While the post‐annealing treatment in hydrogen flow also gives an increase in PL intensity at room temperature of the layer, PL spectrum at 4 K is almost unchanged. The intensity ratio of FB to broadened Ia for the layer after post‐annealing treatment in nitrogen flow increases and the broadened Ia shifts towards longer wavelength side with increasing TDMAP transport rate. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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