Abstract
The effect of post-annealing treatment upon the electrical and optical properties of phosphorus-doped ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus (TDMAP) has been investigated. After the annealing treatment in N2 atmosphere, all the layers exhibited not only improvement of the optical properties but also enhancement of the carrier concentration by one order. Almost linear relationship between the carrier concentration and transport rate of TDMAP is obtainable by the post-annealing treatment. The reversible change of PL properties by alternate annealing treatment in H2 and in N2 was also revealed.
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