Possible half-metallic and spin-gapless semiconducting behavior in quaternary Heusler compounds Co2-xYxFeGa (Y = Ti, V, Cr, Mn, Fe, and Co, x = 0.50)

Abstract

Exceptional tunability in the electronic and magnetic properties makes Heusler compounds very promising from both the fundamental and applied perspectives. Half-metallic ferromagnetism, half-metallic fully-compensated ferrimagnetism, spin-gapless semiconducting behavior, and fully-compensated ferrimagnetic spin-gapless semiconducting behavior have been predicted or demonstrated experimentally in Heusler compounds which makes them suitable for applications in a number of novel spintronic devices1,2,3,4,5. Half-metallic Co-based Heusler alloys are among the most attractive systems due to their high Curie temperatures, high spin polarization and the structural similarity to binary semiconductors6,7,8. Spin-gapless semiconductors can be regarded as a combination of gapless semiconductors and half-metallic ferromagnets where the conducting electrons or holes are not only 100% spin polarized but also easily excited. The realization of spin-gapless semiconducting behavior in Heusler alloys is expected to fulfill the needs for semiconductor spintronics. In this work, we have introduced the substitution of low valence transition metal atoms Y = Ti, V, Cr, Mn, and Fe to Co atoms in the parent Co2FeGa system, and examined the properties of quaternary Heusler compounds Co2-xYxFeGa (x = 0.50), both experimentally and theoretically to get a global overview of the electronic, magnetic, electron transport and mechanical properties. All single-phase alloys exhibit Heusler like L21 ordering, as corroborated by X-ray diffraction. The low-temperature saturation magnetic moments agree fairly well with the values expected from a Slater-Pauling rule for half metals (Fig.1). Electrical transport measurements are performed to explain the electronic structure of the alloys. The temperature dependence of electrical resistivity for Mn substituted alloy shows semiconducting nature in the complete temperature regime (5-400)K (Fig.2). Ab initio calculations are also performed to understand the experimental findings.  The variation of saturation magnetic moment with valence electron counts per formula units with element Y.  Temperature dependence of electrical resistivity in Co1.50Mn0.50FeGa at zero magnetic field showing semiconducting behavior.