Abstract
Abstract Unipolar resistive switching behavior was observed in the as-fabricated Al/PVA/PbS QD/ITO device with R OFF/R ON ratio of 3.15×103 with retentivity for prolonged time and repeatability of hysteresis loops. Schottky emission mechanism dominates conduction mechanism in low-resistance state and high-resistance state of the device. Unipolar resistive switching behavior observed in the device is attributed to Coulomb blockade. The observed characteristic in the device points toward possible application of PbS QDs in memory device.
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